Nitrogen-rich indium nitride
نویسندگان
چکیده
منابع مشابه
The growth of InN and related alloys by high-pressure CVD
The growth of high-quality InN and indium rich group III-nitride alloys are of crucial importance for the development of high-efficient energy conversion systems, THz emitters and detectors structures, as well as for high-speed linear/nonlinear optoelectronic elements. However, the fabrication of such device structures requires the development of growth systems with overlapping processing windo...
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The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0 10 6 Torr of nitrogen trifluoride (NF3) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF3 at 530 1C. The compressive strain of th...
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Influence of Aluminum, Gallium, Indium- Doping on the Boron-Nitride Nanotubes (BNNTs) investigated with density functional theory (DFT) and Hartreefock (HF) methods. For this purpose, the chemical shift of difference atomic nucleus was studied using the gauge included atomic orbital (GIAO) approch. In the following, structural parameter values, electrostatic potential, thermodynamic parameters,...
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In this paper, synthesis of indium nitride (InN) nanowires (NWs) by chemical vapor deposition (CVD) is studied. InN NWs were synthesized via a vapor–liquid–solid (VLS) growth mechanism using high purity indium foil and ammonia as the source materials, and nitrogen as carrier gas. The mixture of nonpolar m-plane oriented and polar c-plane oriented tapered InN NWs is observed grown on top of Si (...
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